Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering
Applied Sciences | Free Full-Text | AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth
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Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers - ScienceDirect
Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers<xref ref-type="fn" rid="cpb142730fn1">*</xref>
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Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)